Si

APS

Purity(%)

SSA(m2/g)

Bulk density(g/cm3)

Crysting form

Color

30nm

99.9

42.5

0.2

Spherical

Yellow

120nm

99.9

8.5

1.9

Spherical

Tans 




Performance
Nano silicon powder was prepared by variable current laser ion beam vapor phase method. The product has the characteristics of high purity, good dispersion, small particle size, uniform distribution, large specific surface area, high surface activity, low bulk density, good activity and large industrial production. Nano silicon powder cw-si-001 can be compounded with graphite and carbon nanotubes to make nano silicon carbon anode materials for lithium-ion batteries, which can improve the capacity and cycle times of lithium-ion batteries and prolong the service life. It is a new generation of optoelectronic semiconductor materials with wide gap energy.


Application
1. Nano silicon wire made of nano silicon powder is used in the nano silicon carbon anode material of rechargeable lithium battery, or graphite coated on the surface of nano spherical silicon powder is used as silicon carbon anode material of rechargeable lithium battery, which can increase the capacitance and charge discharge cycle times of rechargeable lithium battery by more than three times;
2. Nano silica powder is used in high temperature resistant coatings and refractories, which can react with organic compounds and be used as raw materials of silicone polymer materials;
3. Nano silicon powder can be used in solar energy coating;
4. Nano spherical silicon powder is mixed with diamond under high pressure to form nano SiC diamond composite, which is used as cutting tool to provide strength and toughness;
5. As the anode material of nano silicon carbon for lithium ion battery, nano silicon powder has high theoretical specific capacity (theoretical value is 4200 MAH / g), which is much higher than that of carbon material;
6. More than ten kinds of nano silicon particles / silicon oxide nanostructures have been designed on the nano silicon substrate. Photoluminescence and electroluminescence under forward or reverse bias voltage have been realized in the main bands from near ultraviolet to near infrared. The photoluminescence and electroluminescence models are proposed, which will lay a foundation for the realization of silicon-based optoelectronic integration.

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